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参数资料
| 型号： | AM0912-300 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.500 INCH, HERMETIC SEALED, METAL CERAMIC, S038, BIGPAC-2 |
| 文件页数： | 1/6页 |
| 文件大小： | 134K |
| 代理商： | AM0912-300 |
September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
15:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 300 W MIN. WITH 7.0 dB GAIN
.
BANDWIDTH 255 MHz
DESCRIPTION
The AM0912-300 avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
The AM0912-300 is also designed for specialized
applications where reduced power is provided
under pulse formats utilizing short pulse widths
and high burst or overall duty cycles.
This device is capable of withstanding 15:1 VSWR
mismatch load condition at any phase angle under
full rated conditions.
The AM0912-300 is housed in the unique BIG-
PAC Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-300
ORDER CODE
AM0912-300
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100C)
940
W
IC
Device Current*
24
A
VCC
Collector-Supply Voltage*
50
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.16
°C/W
*Applies only to rated RF amplifier operation
AM0912-300
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
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相关代理商/技术参数 |
参数描述 |
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