参数资料
型号: AM1011-075
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S036, AMPAC-2
文件页数: 2/4页
文件大小: 143K
代理商: AM1011-075
ELECTRICAL SPECIFICATIONS (Tcase
= 25°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
POUT
f
= 1090MHz
PIN
= 9W Peak
VCC
= 50V
75
84
W
ηcf = 1090MHz
PIN
= 9W Peak
VCC
= 50V
48
56
%
GP
f
= 1090MHz
PIN
= 9W Peak
VCC
= 50V
9.2
9.7
dB
Note:
Pulse Width
= 32Sec
Duty Cycle
= 2%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BVCBO
IC
= 10mA
IE
= 0mA
65
V
BVEBO
IE
= 4mA
IC
= 0mA
3.5
V
BVCER
IC
= 20mA
RBE
= 10
65
V
ICES
VCE
= 50V
6
mA
hFE
VCE
= 5V
IC
= 1mA
10
———
DYNAMIC
TYPICAL PERFORMANCE
20
30
40
50
60
70
80
90
100
110
120
40
45
50
55
60
65
70
75
80
456789
10
11
12
13
14
15
16
TYPICAL POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
O
W
E
R
O
U
T
P
U
T
W
A
T
S
POWER INPUT (WATTS)
C
O
L
E
C
T
O
R
E
F
.
%
POWER INPUT (WATTS)
η
C
POUT
TYPICAL POWER OUTPUT &
COLLECTOR EFFICIENCY vs
POWER INPUT
AM1011-075
2/4
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