参数资料
型号: AM1011-300
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.600 INCH, HERMETIC SEALED, METAL CERAMIC, M207, 2 PIN
文件页数: 2/5页
文件大小: 441K
代理商: AM1011-300
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
POUT
f
= 1090 MHz
PIN
= 55 W
VCC
= 40 V
325
350
W
hc
f
= 1090 MHz
POUT
= 325 W
VCC
= 40 V
40
45
%
GP
f
= 1090 MHz
POUT
= 325 W
VCC
= 40 V
7.7
8.0
dB
Pulse Conditions: Pulse width = 200
s, Duty Cycle = 5%, are equivalent to the following
pulse burst conditions:
Mode-S Interrogator (freq = 1030MHz)
32 pulses, 32
s on, 18s off, burst period = 17.6ms
long term duty = 5.82%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BVCBO
IC
= 75 mA
IE
= 0 mA
65
V
BVCES
IC
= 75 mA
VBE
= 0 V
65
V
BVEBO
IC
= 25 mA
IC
= 0 mA
3.0
V
ICES
VCE
= 40 V
VBE
= 0 V
——
30
mA
hFE
VCE
= 5 V
IC
= 10 A
10
———
DYNAMIC
AM1011-300
2/5
December 9, 1997
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