参数资料
型号: AM1214-130
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: HERMETIC SEALED, METAL CERAMIC, M259, 3 PIN
文件页数: 1/4页
文件大小: 33K
代理商: AM1214-130
1/4
TARGET DATA
July 2000
AM1214-130
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY /GOLD METALLIZATION
EMITTER SITE BALLASTING
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 130 W MIN. WITH 8.0 dB GAIN
1215-1400 MHz OPERATION
DESCRIPTION
The AM1214-130 is a rugged, Class C common
base device designed as driver of AM1214-250 for
new L - Band medium & long pulse radar applica-
tions.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
PIN CONNECTION
1
3
42
1. Collector
2. Base
3. Emitter
4. Base
M259
hermetically sealed
ORDER CODE
AM1214-130
BRANDING
XAM1214-130
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation (TC ≤ 85°C)*
TBD
W
IC
Device Current*
12
A
VCBO
Collector-Base Voltage
70
V
Tj
Operating Junction Temperature
+250
°C
TSTG
Storage Temperature
-65 to +200
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance*
TBD
°C/W
* Applies only to rated RF amplifier operation: 150 microsec / 10%
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