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参数资料
| 型号： | AM1517-025M |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S042, 2 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 1161K |
| 代理商： | AM1517-025M |
1/8
May 2000
AM1517-025
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
SO42
hermetically sealed
ORDER CODE
AM1517-025
BRANDING
1517-25
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METALLIC/CERAMIC HERMETIC PACKAGE
POUT = 25 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM1517-025 power transistor is designed
specifically for Satellite communications applica-
tions in the 1.5 - 1.7 frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing a
refractory/Gold metallization system.
The AM1517-025 is supplied in the AMPAC
TM
Hermetic/Ceramic package with internal Input/
Output matching structures.
PIN CONNECTION
1
4
3
2
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (TCASE = 25
0C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* ( Tc
≤ 50 0C)
45
W
IC
Device Current*
2.5
A
VCC
Collector-Supply Voltage*
30
V
Tj
Junction Temperature
200
0C
TSTG
Storage Temperature
-65 to +200
0C
THERMAL DATA
Rth(j-c)
Junction-Case Thermal Resistance*
3.3
0C/W
* Applies only to rated RF amplifier operation
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