参数资料
型号: AM80912-005
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.310 X 0.310 INCH, HERMETIC SEALED, METAL CERAMIC, S064, IMPAC-2
文件页数: 1/4页
文件大小: 129K
代理商: AM80912-005
August 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.310 x .310 2LFL (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 6.0 W MIN. WITH 9.3 dB GAIN
DESCRIPTION
The AM80912-005 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-005 is housed in the unique
IMPAC Hermetic Metal/Ceramic package with
PIN CONNECTION
BRANDING
80912-5
ORDER CODE
AM80912-005
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 75C)
25
W
IC
Device Current*
0.9
A
VCC
Collector-Supply Voltage*
32
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
7.0
°C/W
*Applies only to rated RF amplifier operation
AM80912-005
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
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