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参数资料
| 型号： | AM29F032B-75FC |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 4M X 8 FLASH 5V PROM, 70 ns, PDSO40 |
| 封装： | REVERSE, MO-142CD, TSOP-40 |
| 文件页数： | 10/41页 |
| 文件大小： | 1511K |
| 代理商： | AM29F032B-75FC |
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Am29F032B
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
The Erase Resume command is valid only during the
Erase Suspend mode. See “Erase Suspend/Erase Re-
sume Commands” on page 17 for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
page 17 for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
on page 16 for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F080-120SEB | 1M X 8 FLASH 5V PROM, 120 ns, PDSO44 |
| AM29F080-150EEB | 1M X 8 FLASH 5V PROM, 150 ns, PDSO40 |
| Am29F100B-120DGI | Hex Inverters 14-TSSOP -40 to 85 |
| Am29F100B-120DPC | Hex Inverters 14-TSSOP -40 to 85 |
| Am29F100B-120DPE | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F032B-75SF | 功能描述:闪存 32M (4MX8) 75ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F032B-90ED | 制造商:Spansion 功能描述:IC FLASH 32MB SMD 29F032 TSOP40 |
| AM29F032B-90EF | 功能描述:闪存 32M (4MX8) 90ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F032B90EK | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 32Mbit 4M x 8bit 90ns 40-Pin TSOP |
| AM29F032B-90SD | 制造商:Spansion 功能描述: |
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