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参数资料
| 型号： | AM29F032B-75FC |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 4M X 8 FLASH 5V PROM, 70 ns, PDSO40 |
| 封装： | REVERSE, MO-142CD, TSOP-40 |
| 文件页数： | 23/41页 |
| 文件大小： | 1511K |
| 代理商： | AM29F032B-75FC |
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This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21610
Rev: D Amendment/+2
Issue Date: Novermber 8, 2004
Am29F032B
32 Megabit (4 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■
5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
■
Manufactured on 0.32 m process technology
■
High performance
— Access times as fast as 70 ns
■
Low power consumption
— 30 mA typical active read current
— 30 mA typical program/erase current
— <1 A typical standby current (standard access
time to active mode)
■
Flexible sector architecture
— 64 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
— A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
— Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
■
Minimum 1,000,000 write/erase cycles
guaranteed
■
20-year data retention at 125
°C
— Reliable operation for the life of the system
■
Package options
— 40-pin TSOP
— 44-pin SO
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
■
Ready/Busy output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■
Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F080-120SEB | 1M X 8 FLASH 5V PROM, 120 ns, PDSO44 |
| AM29F080-150EEB | 1M X 8 FLASH 5V PROM, 150 ns, PDSO40 |
| Am29F100B-120DGI | Hex Inverters 14-TSSOP -40 to 85 |
| Am29F100B-120DPC | Hex Inverters 14-TSSOP -40 to 85 |
| Am29F100B-120DPE | 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F032B-75SF | 功能描述:闪存 32M (4MX8) 75ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F032B-90ED | 制造商:Spansion 功能描述:IC FLASH 32MB SMD 29F032 TSOP40 |
| AM29F032B-90EF | 功能描述:闪存 32M (4MX8) 90ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F032B90EK | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 32Mbit 4M x 8bit 90ns 40-Pin TSOP |
| AM29F032B-90SD | 制造商:Spansion 功能描述: |
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