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参数资料
| 型号： | Am29F040B-70JC |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 4兆位（512亩× 8位）的CMOS 5.0伏只，统一部门快闪记忆体 |
| 文件页数： | 29/30页 |
| 文件大小： | 403K |
| 代理商： | AM29F040B-70JC |
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8
Am29F040B
P R E L I M I NARY
Table 3.
Am29F040B Autoselect Codes (High Voltage Method)
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables both
program and erase operations in previously pro-
tected sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure re-
quires a high voltage (VID) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 19957. Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spuri-
ous system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. The Command Definitions table defines the
valid register command sequences. Writing incorrect
address and data values or writing them in the im-
proper sequence resets the device to reading array
data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
Description
A18–A16
A15–A10
A9
A8–A7
A6
A5–A2
A1
A0
Identifier Code on
DQ7-DQ0
Manufacturer ID: AMD
X
VID
XVIL
VIL
01h
Device ID: Am29F040B
X
VID
XVIL
VIH
A4h
Sector Protection
Verification
Sector
Address
XVID
XVIL
XVIH
VIL
01h (protected)
00h (unprotected)
相关PDF资料 |
PDF描述 |
|---|---|
| Am29F040B-70JE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70JI | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70PCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70PC | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70PEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F040B-70JD | 制造商:Spansion 功能描述:IC SM FLASH 5V 4MB |
| AM29F040B-70JD | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F040B-70JF | 功能描述:闪存 4M (512Kx8) 70ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F040B-70JF | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F040B-70JF | 制造商:Spansion 功能描述:IC SM FLASH 5V 4MB |
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