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参数资料
型号： AM29F160DB120FI
厂商： ADVANCED MICRO DEVICES INC
元件分类： PROM
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述： 1M X 16 FLASH 5V PROM, 120 ns, PDSO48
封装： REVERSE, MO-142DD, TSOP-48
文件页数： 4/46页
文件大小： 914K
代理商： AM29F160DB120FI
Am29F160D
3
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Am29F160D Device Bus Operations.................................. 8
Word/Byte Configuration .......................................................... 8
Requirements for Reading Array Data ..................................... 8
Writing Commands/Command Sequences .............................. 9
Program and Erase Operation Status ...................................... 9
Standby Mode .......................................................................... 9
Automatic Sleep Mode ............................................................. 9
RESET#: Hardware Reset Pin ................................................. 9
Output Disable Mode................................................................ 9
Table 2. Am29F160DT Sector Address Table (Top Boot).............. 10
Table 3. Am29F160DB Sector Address Table (Bottom Boot)......... 11
Autoselect Mode..................................................................... 12
Table 4. Am29F160D Autoselect Codes (High Voltage Method).... 12
Sector Protection/Unprotection............................................... 12
Write Protect (WP#)................................................................ 13
Temporary Sector Unprotect.................................................. 13
Figure 1. Temporary Sector Unprotect Operation........................... 13
Common Flash Memory Interface (CFI). . . . . . . 15
Table 5. CFI Query Identification String.......................................... 15
Table 6. System Interface String..................................................... 16
Table 7. Device Geometry Definition .............................................. 16
Table 8. Primary Vendor-Specific Extended Query ........................ 17
Hardware Data Protection...................................................... 18
Low V
CC
Write Inhibit...................................................................... 18
Write Pulse “Glitch” Protection........................................................ 18
Logical Inhibit.................................................................................. 18
Power-Up Write Inhibit.................................................................... 18
Reading Array Data................................................................ 18
Reset Command..................................................................... 18
Autoselect Command Sequence............................................ 19
Word/Byte Program Command Sequence ............................. 19
Unlock Bypass Command Sequence.............................................. 19
Figure 3. Program Operation .......................................................... 20
Chip Erase Command Sequence........................................... 20
Sector Erase Command Sequence........................................ 20
Erase Suspend/Erase Resume Commands........................... 21
Figure 4. Erase Operation............................................................... 21
Command Definitions............................................................. 22
Table 9. Am29F160D Command Definitions................................... 22
DQ7: Data# Polling................................................................. 23
Figure 5. Data# Polling Algorithm .................................................. 23
RY/BY#: Ready/Busy#............................................................ 24
DQ6: Toggle Bit I.................................................................... 24
DQ2: Toggle Bit II................................................................... 24
Reading Toggle Bits DQ6/DQ2............................................... 24
DQ5: Exceeded Timing Limits................................................ 25
DQ3: Sector Erase Timer ....................................................... 25
Figure 6. Toggle Bit Algorithm........................................................ 25
Table 10. Write Operation Status................................................... 26
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 27
Figure 7. Maximum Negative Overshoot Waveform...................... 27
Figure 8. Maximum Positive Overshoot Waveform........................ 27
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 27
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28
TTL/NMOS Compatible .......................................................... 28
CMOS Compatible.................................................................. 29
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 9. Test Setup....................................................................... 30
Table 11. Test Specifications......................................................... 30
Key to Switching Waveforms. . . . . . . . . . . . . . . . 30
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 10. Read Operations Timings............................................. 31
Figure 11. RESET# Timings .......................................................... 32
Figure 12. BYTE# Timings for Read Operations............................ 33
Figure 13. BYTE# Timings for Write Operations............................ 33
Figure 14. Program Operation Timings.......................................... 35
Figure 15. Chip/Sector Erase Operation Timings .......................... 36
Figure 16. Data# Polling Timings (During Embedded Algorithms). 37
Figure 17. Toggle Bit Timings (During Embedded Algorithms)...... 37
Figure 18. DQ2 vs. DQ6................................................................. 38
Figure 19. Temporary Sector Unprotect Timing Diagram .............. 38
Figure 20. Sector Protect/Unprotect Timing Diagram.................... 39
Figure 21. Alternate CE# Controlled Write Operation Timings ...... 41
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 42
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 42
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 43
TSR048—48-Pin Reverse Thin Small Outline Package......... 44
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 45
Revision A (January 1999) ..................................................... 45
Revision B (June 14, 1999) .................................................... 45
Revision B+1 (July 7, 1999).................................................... 45
Revision B+2 (July 14, 1999).................................................. 45
Revision B+3 (July 30, 1999).................................................. 45
Revision B+4 (September 10, 1999) ...................................... 45
Revision C (November 16, 1999) ........................................... 45
Revision D (December 4, 2000) ............................................. 45
相关PDF资料
PDF描述
AM29F160DB75 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F160DT90 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F160DT90EC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F160DT90EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F160DT90FC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
相关代理商/技术参数
参数描述
AM29F160DB-70ED 制造商:Spansion 功能描述:
AM29F160DB-70EF 功能描述:闪存 16Mb 70ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AM29F160DB-70EFT 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP T/R
AM29F160DB-70EIT 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP T/R
AM29F160DB-75EF 功能描述:闪存 16Mb 75ns 5V Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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