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参数资料
型号： AM29F160DB120FI
厂商： ADVANCED MICRO DEVICES INC
元件分类： PROM
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述： 1M X 16 FLASH 5V PROM, 120 ns, PDSO48
封装： REVERSE, MO-142DD, TSOP-48
文件页数： 46/46页
文件大小： 914K
代理商： AM29F160DB120FI
Am29F160D
45
REVISION SUMMARY
Revision A (January 1999)
Initial release.
Revision B (June 14, 1999)
Global
Expanded data sheet into document with full specifica-
tions.
Deleted the 55 ns speed options.
Distinctive Characteristics
In the Ultra Low Power Consumption bullets, changed
the typical current to match the DC specifications
(CMOS Compatible) table.
Revision B+1 (July 7, 1999)
Connection Diagrams
Corrected the signals on pins 39 and 40 of the reverse
TSOP package.
Revision B+2 (July 14, 1999)
Global
Changed the V
CC
operating range of the 70 ns speed
option to 5.0 V ± 5%. Deleted all references to uniform
sector.
Command Definitions table
In Note 7, added a reference to CFI query mode.
Revision B+3 (July 30, 1999)
Global
Changed the part number designator for the 70 ns
speed option to 75 (with V
CC
rated at 5.0 V ± 5%).
DC Characteristics
TTL/NMOS Compatible table:
Changed the maximum
current specification for I
CC2
to 50 mA.
Revision B+4 (September 10, 1999)
Device Bus Operations
Write Protect (WP#):
Clarified explanatory text.
Command Definitions
Autoselect Command Sequence:
Added text and table
explaining effect of WP# input on autoselect code
output for 16 Kbyte boot sector.
Revision C (November 16, 1999)
AC Characteristics—Figure 14. Program
Operations Timing and Figure 15. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D (December 4, 2000)
Removed Advance Information status from document.
Ordering Information
Deleted optional processing.
Table 9, Command Definitions
In Note
5, changed the lower address bit in don’t care
range to A11.
Table 11, Test Specifications
Changed capacitive loading on 70 ns speed option to
30 pF
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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AM29F160DB75 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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相关代理商/技术参数
参数描述
AM29F160DB-70ED 制造商:Spansion 功能描述:
AM29F160DB-70EF 功能描述:闪存 16Mb 70ns 5v Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AM29F160DB-70EFT 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP T/R
AM29F160DB-70EIT 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 70ns 48-Pin TSOP T/R
AM29F160DB-75EF 功能描述:闪存 16Mb 75ns 5V Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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