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参数资料
| 型号： | AM29F160DT75FC |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| 中文描述： | 1M X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | REVERSE, MO-142DD, TSOP-48 |
| 文件页数： | 22/46页 |
| 文件大小： | 914K |
| 代理商： | AM29F160DT75FC |
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Am29F160D
21
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. Refer to “Write Operation Status” for informa-
tion on these status bits.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 μs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase Sus-
pend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 μs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See “Write Operation Status” for more informa-
tion.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
1. See the appropriate Command Definitions table for erase
command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F160DT75FI | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| AM29F200AB-120FI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AB-55SEB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F200AB-55SI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F200AB-55SIB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F160DT-90EE | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, TOP, TSOP48, EXT - Trays |
| AM29F160DT-90EF | 功能描述:闪存 16Mb 90ns 5V Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F160DT-90EI | 功能描述:闪存 IC 16MX16, 3V 100K FLSH, BOTTM RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F200AB-120DPE1 | 制造商:Spansion 功能描述:5V 2M FLASH KNOWN GOOD DIE W/ BOTTOM BOOT (EXTENDED TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F200AB-90SC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
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