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参数资料
| 型号： | AM29F200BB-70SD |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 128K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| 封装： | LEAD FREE, MO-180AA, SOP-44 |
| 文件页数： | 35/41页 |
| 文件大小： | 818K |
| 代理商： | AM29F200BB-70SD |
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Am29F200B
21526D5 March 3, 2009
D A TA
SH EE T
REVISION SUMMARY
Revision A (July 1998)
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams
Revision B (January 1999)
Distinctive Characteristics
Added bullet for 20-year data retention at 125
°C
Ordering Information
Optional Processing: Deleted “B = Burn-in”.
DC Characteristics—TTL/NMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifi-
cations are tested with VCC = VCCmax”.
DC Characteristics—CMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifi-
cations are tested with VCC = VCCmax”.
AC Characteristics
Algorithms): Added text to note.
rithms): Added text to note.
Revision B+2 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision C (November 12, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D (November 29, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
Revision D (November 29, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
Revision D+1 (June 14, 2004)
Ordering Information
Added Pb-free OPNs.
Revision D+2 (February 16, 2006)
Global
Deleted TSR048 48-pin Reverse TSOP option.
Revision D3 (May 18, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision D4 (November 1, 2006)
Deleted “Not recommended for new designs” note.
Revision D5 (March 3, 2009)
Global
Added obsolescence information.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F200BB-70SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BB-90EC | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
| AM29F200BB-90ED | Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| AM29F200BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BB-90SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200BB-70SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 70ns 44-Pin SOIC |
| AM29F200BB-70SF | 功能描述:闪存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F200BB-70SI\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 70ns 44-Pin SOIC T/R |
| AM29F200BB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90EF | 制造商:Advanced Micro Devices 功能描述: |
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