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参数资料
| 型号： | AM29F400BB-120SD |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 5V PROM, 120 ns, PDSO44 |
| 封装： | LEAD FREE, MO-180AA, SOP-44 |
| 文件页数： | 24/43页 |
| 文件大小： | 865K |
| 代理商： | AM29F400BB-120SD |
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28
Am29F400B
21505E6 March 3, 2009
D A TA
SH EE T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
Description
-45
-50
-55
-70
-90
-120
Unit
tELFL/tELFH CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
15
20
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
4550557090
120
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
tELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
tFLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
tELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
tFHQV
BYTE#
Switching
from byte
to word
mode
Figure 11.
BYTE# Timings for Read Operations
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 12.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
tHOLD (tAH)
tSET
(tAS)
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BB-55ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-55SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-70ED | Flash Memory IC; Memory Size:4Mbit; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes |
| AM29F400BB-70SD | Flash Memory IC; Memory Size:4Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-90EC | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Memory Size:4Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BB120SI | 制造商:AMD 功能描述:* |
| AM29F400BB45EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 45ns 48-Pin TSOP |
| AM29F400BB-45EFT | 制造商:Spansion 功能描述: |
| AM29F400BB-45EI | 制造商:Spansion 功能描述: |
| AM29F400BB-45EI\\T | 制造商:Spansion 功能描述: |
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