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参数资料
| 型号： | AM29F400BT-90SC |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 256K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | MO-180AA, SOP-44 |
| 文件页数： | 37/37页 |
| 文件大小： | 238K |
| 代理商： | AM29F400BT-90SC |
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Am29F400B
37
P R E L I M I N A R Y
REVISION SUMMARY
Revision B
Global
Added -55 and -60 speed options, deleted -65 speed
option. Changed data sheet designation from Advance
Information to Preliminary.
Connection Diagrams
Corrected pinouts on all packages: deleted A18.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 μs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 μs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 μs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
ID
min and max values are 11.5
to 12.5 V, with a V
CC
test condition of 5.0 V. Revised I
LIT
to 50 μA. Added I
CC4
specification. Added typical
values to TTL/NMOS table. Revised CMOS typical
standby current (I
CC3
).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms.
AC Characteristics, Erase/Program Operations
Corrected t
AH
specification for -90 speed option to 45
ns.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
AC Characteristics
Changed t
DF
and T
FLQZ
to 15 ns for -55 speed option.
Revision C+1
Table 2, Top Boot Block Sector Address Table
Corrected the sector size for SA10 to 16 Kbytes/8
Kwords.
DC Characteristics—TTL/NMOS Compatible
Deleted Note 4.
Revision C+2
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
AC Characteristics
Word/Byte Configuration: Changed t
FHQV
specification
for 55 ns device.
Erase/Program Operations: Changed t
WHWH1
word
mode specification to 12 μs. Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Changed t
DS
and t
CP
specifications for 55 ns device.
Alternate CE# Controlled Erase/Program Operations:
Changed t
WHWH1
word mode specification to 12 μs.
Corrected the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested.
Changed t
DS
and t
CP
specifications for 55 ns device.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash
is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料 |
PDF描述 |
|---|---|
| Am29F400BT-90SCB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SE | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SEB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SI | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F400BT-90SIB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BT-90SE\T | 制造商:Spansion 功能描述:4 MEGABIT (512 K X 8-BIT/256 K X 16-BIT) CMOS 5.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY |
| AM29F400BT-90SF\\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
| AM29F400BT-90SF\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
| AM29F400BT-90SI | 制造商:Spansion 功能描述: |
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
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