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参数资料
| 型号： | AM29F400BT-90SE |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩x 8-Bit/256亩x 16位），5.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 42/43页 |
| 文件大小： | 548K |
| 代理商： | AM29F400BT-90SE |
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40
Am29F400B
21505E5 November1,2006
D A T A S H E E T
General Description
Third paragraph: Added 45 ns to access times.
Product Selector Guide
Added the -45 speed option for V
CC
= 5.0 V ± 5% and
the -55 speed option for V
CC
= 5.0 V ± 10%.
Ordering Information
Added “Special Designation” to “Optional Processing”
heading; added “0” for 55 ns 10% VCC, deleted burn-in.
Burn-in is available by contacting an AMD representative.
Added -55 ± 10% and -45 speed options to the list of
valid combinations. Added extended temperature
ratings to -55 ±5% valid combinations.
Table 1, Device Bus Operations
Changed the BYTE#=V
IL
input for DQ8–DQ15 during
temporary sector unprotect to “don’t care” (X).
Figure 6. Maximum Negative Undershoot
Waveform
Corrected figure title.
Table 7, Test Specifications
Test load capacitance: Removed 55 ns speed option
from and added -45 speed option to the 30 pF.
DC Characteristics
Removed V
CC
= V
CC max
test condition for I
CC1
– I
CC3
.
V
CC
max is only valid for max specs.
AC Characteristics
Added the -45 speed option.
Revision C+4 (August 1998)
Ordering Information
Added extended temperature combinations to the -55,
±10% speed option.
Deleted the -60 speed option.
Revision D (January 1999)
Distinctive Characteristics
Added:
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
DC Characteristics—TTL/NMOS Compatible
I
CC1
, I
CC2
, I
CC3
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
: Added Note 2 “Maximum I
CC
specifications are tested with V
CC
= V
CCmax
”.
Erase and Programming Performance
Deleted “(4.75 V for -45 and -55xx0)”
from Note 2.
Revision D+1 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 15, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (November 30, 2000)
Added table of contents. Reinserted revision summa-
ries for revisions A and B.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs
Revision E+3 (December 22, 2005)
Global
Deleted 150 ns speed option and reverse TSOP pack-
age from document.
Revision E4 (May 18, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed t
BUSY
specification to maximium value.
Revision E5 (November 1, 2006)
Deleted “Not recommended for new designs” note and
Retired Product designation.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F400BT-90SE0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SF | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SF0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SI | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F400BT-90SI0 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F400BT-90SE\T | 制造商:Spansion 功能描述:4 MEGABIT (512 K X 8-BIT/256 K X 16-BIT) CMOS 5.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY |
| AM29F400BT-90SF\\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
| AM29F400BT-90SF\T | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K/256K x 8bit/16bit 90ns 44-Pin SO T/R |
| AM29F400BT-90SI | 制造商:Spansion 功能描述: |
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
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