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参数资料
型号： AM29F400BT-90SF0
厂商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512亩x 8-Bit/256亩x 16位），5.0伏的CMOS只引导扇区闪存
文件页数： 41/43页
文件大小： 548K
代理商： AM29F400BT-90SF0
November1,2006 21505E5
Am29F400B
39
D A T A S H E E T
REVISION SUMMARY
Revision A (August 1997)
Initial release.
Revision B (October 1997)
Global
Added -55 and -60 speed options, deleted -65 speed
option. Changed data sheet designation from Advance
Information to Preliminary.
Connection Diagrams
Corrected pinouts on all packages: deleted A18.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 μs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 μs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 μs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
ID
min and max values are 11.5
to 12.5 V,with a V
CC
test condition of 5.0 V. Revised I
LIT
to 50 μA. Added I
CC4
specification. Added typical
values to TTL/NMOS table. Revised CMOS typical
standby current (I
CC3
).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms.
AC Characteristics, Erase/Program Operations
Corrected t
AH
specification for -90 speed option to 45
ns.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
AC Characteristics
Changed t
DF
and T
FLQZ
to 15 ns for -55 speed option.
Revision C+1 (February 1998)
Table 2, Top Boot Block Sector Address Table
Corrected the sector size for SA10 to 16 Kbytes/
8 Kwords.
DC Characteristics—TTL/NMOS Compatible
Deleted Note 4.
Revision C+2 (April 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Product Selector Guide, Ordering Information
Added 55 ns ±10% speed option.
AC Characteristics
Word/Byte Configuration: Changed t
FHQV
specification
for 55 ns device.
Erase/Program Operations:
Changed t
WHWH1
word
mode specification to 12 μs. Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Changed t
DS
and t
CP
specifications for 55 ns device.
Alternate CE# Controlled Erase/Program Operations:
Changed t
WHWH1
word mode specification to 12 μs.
Corrected the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested.
Changed t
DS
and t
CP
specifications for 55 ns device.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C+3 (June 1998)
Distinctive Characteristics
High Performance:
Changed “Access times as fast as
55 ns” to “Access times as fast as 45 ns”.
相关PDF资料
PDF描述
AM29F400BT-90SI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90SI0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90SK 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90SK0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F800B-120FE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
相关代理商/技术参数
参数描述
AM29F400BT-90SI 制造商:Spansion 功能描述:
AM29F800BB-120DPC1 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F800BB120SC 制造商:Advanced Micro Devices 功能描述:
AM29F800BB-55EC 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP
AM29F800BB-55EF 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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