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| 型号： | AM29F800B-70FEB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），5.0伏的CMOS只，扇区擦除闪存 |
| 文件页数： | 17/41页 |
| 文件大小： | 267K |
| 代理商： | AM29F800B-70FEB |
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8/18/97
Am29F800T/Am29F800B
17
P R E L I M I N A R Y
cause DQ6 to toggle. See Figure 12 for the Toggle Bit
timing specifications and diagrams.
DQ5: Exceeded Timing Limits
DQ5 will indicate if the program or erase time has ex-
ceeded the specified limits (internal pulse count).
Under these conditions DQ5 will produce a “1”. This is
a failure condition which indicates that the program or
erase cycle was not successfully completed. Data Poll-
ing is the only operating function of the device under
this condition. The CE circuit will partially power down
the device under these conditions (to approximately 2
mA). The OE and WE pins will control the output dis-
able functions as described in Table 1.
The DQ5 failure condition will also appear if a user tries
to program a 1 to a location that is previously pro-
grammed to 0. In this case the device locks out and
never completes the Embedded Program Algorithm.
Hence, the system never reads a valid data on DQ7 bit
and DQ6 never stops toggling. Once the device has ex-
ceeded timing limits, the DQ5 bit will indicate a “1”.
Please note that this is not a device failure condition
since the device was incorrectly used. If this occurs,
reset the device.
DQ3: Sector Erase Timer
After the completion of the initial sector erase com-
mand sequence the sector erase time-out will begin.
DQ3 will remain low until the time-out is complete. Data
Polling and Toggle Bit are valid after the initial sector
erase command sequence.
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, DQ3 may be
used to determine if the sector erase timer window is
still open. If DQ3 is high (“1”) the internally controlled
erase cycle has begun; attempts to write subsequent
commands (other than Erase Suspend) to the device
will be ignored until the erase operation is completed
as indicated by Data Polling or Toggle Bit. If DQ3 is low
(“0”), the device will accept additional sector erase
commands. To insure the command has been ac-
cepted, the system software should check the status of
DQ3 prior to and following each subsequent sector
erase command. If DQ3 were high on the second sta-
tus check, the command may not have been accepted.
Refer to Table 8, Hardware Sequence Flags.
DQ2: Toggle Bit 2
This toggle bit, along with DQ6, can be used to deter-
mine whether the device is in the Embedded
Erase Algorithm or in Erase suspend.
Successive reads from the erasing sector will cause
DQ2 to toggle during the Embedded Erase Algorithm.
If the device is in the erase suspend-read mode, suc-
cessive reads from the erase-suspend sector will
cause DQ2 to toggle. When the device is in the erase
suspend-program mode, successive reads from the
byte address of the non-erase suspend sector will indi-
cate a logic “1” at the DQ2 bit. Note that a sector which
is selected for erase is not available for read in Erase
Suspend mode. Other sectors which are not selected
for Erase can be read in Erase Suspend.
DQ6 is different from DQ2 in that DQ6 toggles only
when the standard program or erase, or erase sus-
pend-program operation is in progress.
If the DQ5 failure condition is observed while in Sector
Erase mode (i.e., exceeded timing limits), the DQ2 tog-
gle bit can give extra information. In this case, the nor-
mal function of DQ2 is modified. If DQ5 is at logic “1”,
then DQ2 will toggle with consecutive reads only at the
sector address that caused the failure condition. DQ2
will toggle at the sector address where the failure oc-
curred and will not toggle at other sector addresses.
RY/BY:
Ready/Busy
The Am29F800 provides a RY/BY open-drain output
pin as a way to indicate to the host system that the Em-
bedded Algorithms are either in progress or have been
completed. If the output is low, the device is busy with
either a program or erase operation. If the output is
high, the device is ready to accept any read/write or
erase operation. When the RY/BY pin is low, the device
will not accept any additional program or erase com-
mands with the exception of the Erase Suspend com-
mand. If the Am29F800 is placed in an Erase Suspend
mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after
the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising
edge of the sixth WE pulse. The RY/BY pin should be
ignored while RESET is at V
IL
. Refer to Figure 13 for a
detailed timing diagram.
Since this is an open-drain output, several RY/BY
pins can be tied together in parallel with a pull-up resis-
tor to V
CC
.
RESET: Hardware Reset
The Am29F800 device may be reset by driving the
RESET pin to V
IL
. The RESET pin must be kept low
(V
IL
) for at least 500 ns. Any operation in progress will
be terminated and the internal state machine will be
reset to the read mode 20
μ
s after the RESET pin is
driven low. Furthermore, once the RESET pin goes
high, the device requires an additional 50 ns before it
will allow read access. When the RESET pin is low, the
device will be in the standby mode for the duration of
the pulse and all the data output pins will be tri-stated.
If a hardware reset occurs during a program or erase
operation, the data at that particular location will
be indeterminate.
The RESET pin may be tied to the system reset input.
Therefore, if a system reset occurs during
the Embedded Program or Erase Algorithm, the device
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800B-70FI | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FIB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70SC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70SCB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70SE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相关代理商/技术参数 |
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| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
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| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
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