参数资料
型号: AM29F800B-70SI
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
封装: SOP-44
文件页数: 35/41页
文件大小: 267K
代理商: AM29F800B-70SI
8/18/97
Am29F800T/Am29F800B
35
P R E L I M I N A R Y
SWITCHING WAVEFORM
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
Figure 19.
Alternate CE Controlled Program Operation Timings
D
OUT
P
t
AH
Data Polling
t
DS
t
WS
t
CPH
t
DH
t
CP
t
GHEL
Addresses
WE
OE
CE
Data
5.0 Volt
DQ7
555H
PA
A0H
PA
20375C-24
t
WC
t
AS
t
WHWH1
相关PDF资料
PDF描述
AM29F800B-70SIB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-90 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-90EC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-90ECB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-90EE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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