参数资料
型号: AM29LV004BB-120EI
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
封装: MO-142CD, TSOP-40
文件页数: 21/40页
文件大小: 769K
代理商: AM29LV004BB-120EI
20
Am29LV004B
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 6).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.”
Only an erase operation can change
a “0” back to a “1.”
Under this condition, the device
halts the operation, and when the operation has
exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 μs, the system need not monitor DQ3.
See also the “Sector Erase Command Sequence”
section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been
accepted. Table 6 shows the outputs for DQ3.
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1” . See text.
Figure 6.
Toggle Bit Algorithm
(Notes
1, 2)
(Note 1)
相关PDF资料
PDF描述
AM29LV004BB-120FC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FI 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-120EC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-120EE Slide DIP switches are available in 2 through 12 positions and vertical/right angle options
相关代理商/技术参数
参数描述
AM29LV004BB120EI\T 制造商:Advanced Micro Devices 功能描述:4 Mb (512K x 8) Boot Sector, Flash Memory
AM29LV004BB-120EIT 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述:
am29lv004bt-120ed 制造商:Advanced Micro Devices 功能描述:
AM29LV004BT-90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV008BB-120ECT 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B