参数资料
型号: AM29LV004BB-120EI
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
封装: MO-142CD, TSOP-40
文件页数: 26/40页
文件大小: 769K
代理商: AM29LV004BB-120EI
Am29LV004B
25
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Figure 11.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-70
-90,
-120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 12.
Input Waveforms and Measurement Levels
相关PDF资料
PDF描述
AM29LV004BB-120FC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FI 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-120EC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BT-120EE Slide DIP switches are available in 2 through 12 positions and vertical/right angle options
相关代理商/技术参数
参数描述
AM29LV004BB120EI\T 制造商:Advanced Micro Devices 功能描述:4 Mb (512K x 8) Boot Sector, Flash Memory
AM29LV004BB-120EIT 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述:
am29lv004bt-120ed 制造商:Advanced Micro Devices 功能描述:
AM29LV004BT-90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV008BB-120ECT 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B