参数资料
型号: Am29LV004BT-70EE
厂商: Advanced Micro Devices, Inc.
英文描述: Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 200pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
中文描述: 4兆位(512亩× 8位)的CMOS 3.0伏,只引导扇区闪存
文件页数: 25/40页
文件大小: 769K
代理商: AM29LV004BT-70EE
24
Am29LV004B
DC CHARACTERISTICS (continued)
Zero Power Flash
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
S
Time in ns
Note:
Addresses are switching at 1 MHz
Figure 9.
I
CC1
Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
2
0
1
2
3
4
5
Frequency in MHz
S
Note:
T = 25
°
C
Figure 10.
Typical I
CC1
vs. Frequency
2.7 V
3.6 V
4
6
相关PDF资料
PDF描述
AM29LV004BB-120EC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120EE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120EI 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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