参数资料
型号: AM29LV065DU101RWHIN
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
中文描述: 8M X 8 FLASH 3V PROM, 100 ns, PBGA63
封装: 11 X 12 MM, 0.80 MM PITCH, FBGA-63
文件页数: 23/52页
文件大小: 1184K
代理商: AM29LV065DU101RWHIN
22
Am29LV065D
January 10, 2002
Table 9.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations.
Table 10
defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
resets
the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
The system
must
issue the reset command to return
the device to the read (or erase-suspend-read) mode
if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode.
See the next section, Reset Command, for more infor-
mation.
Addresses (x8)
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string
PRI
43h
31h
Major version number, ASCII
44h
31h
Minor version number, ASCII
45h
01h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
04h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
01h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
00h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type
00 = Not Supported
4Dh
B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
00h
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
相关PDF资料
PDF描述
AM29LV065DU120RWHIN 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
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AM29LV065DU101RWHEN 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
AM29LV065DU120RWHEN 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
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