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| 型号： | AM29LV065DU101RWHIN |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| 中文描述： | 8M X 8 FLASH 3V PROM, 100 ns, PBGA63 |
| 封装： | 11 X 12 MM, 0.80 MM PITCH, FBGA-63 |
| 文件页数： | 48/52页 |
| 文件大小： | 1184K |
| 代理商： | AM29LV065DU101RWHIN |
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January 10, 2002
Am29LV065D
47
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 3.0 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table
10
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.9
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
115
sec
Byte Program Time
5
150
μs
Excludes system level
overhead (Note 5)
Accelerated Byte Program Time
4
120
μs
Chip Program Time (Note 3)
42
126
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–
1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–
1.0 V
V
CC
+ 1.0 V
V
CC
Current
–
100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV065DU120RWHIN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU90RWHEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU101RWHEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU120RWHEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU90RFEN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29LV065DU120REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 120ns 48-Pin TSOP 制造商:Spansion 功能描述:SPZAM29LV065DU120REF MEM FLASH EOL160610 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV065DU120REI | 制造商:Spansion 功能描述:IC, FLASH MEM, 64MBIT, 120NS, 48-TSOP, Memory Type:Flash, Memory Size:64Mbit, Me |
| AM29LV065DU120RWHI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 120ns 63-Pin FBGA |
| AM29LV065DU90REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 3V 64MB |
| AM29LV065DU90REF | 制造商:Spansion 功能描述:FLASH MEMORY IC |
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