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| 型号： | AM29LV065DU90RFIN |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| 中文描述： | 64兆位（8米× 8位）的CMOS 3.0伏特，只有统一部门闪光控制记忆与VersatileIOTM |
| 文件页数： | 36/52页 |
| 文件大小： | 1184K |
| 代理商： | AM29LV065DU90RFIN |
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January 10, 2002
Am29LV065D
35
TEST CONDITIONS
Table 12.
Test Specifications
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
90R,
101R
120R,
121R
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0
–
3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V
IO
V
3.0 V
0.0 V
1.5 V
0.5 V
IO
V
Output
Measurement Level
Input
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 12.
Input Waveforms and Measurement Levels
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don
’
t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
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