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参数资料
型号： AM29LV160DB-70EF
厂商： Advanced Micro Devices, Inc.
元件分类： FLASH
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16Mb(2M×8位/1Mx16位), 3V, CMOS引导扇区闪存
文件页数： 5/52页
文件大小： 844K
代理商： AM29LV160DB-70EF
22358B7
May 5, 2006
Am29LV160D
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .9
Table 1. Am29LV160D Device Bus Operations ................................9
Word/Byte Configuration ..........................................................9
Requirements for Reading Array Data .....................................9
Writing Commands/Command Sequences ..............................9
Program and Erase Operation Status ....................................10
Standby Mode ........................................................................10
Automatic Sleep Mode ...........................................................10
RESET#: Hardware Reset Pin ...............................................11
Output Disable Mode ..............................................................11
Table 2. Sector Address Tables (Am29LV160DT) ..........................12
Table 3. Sector Address Tables (Am29LV160DB) ..........................13
Autoselect Mode .....................................................................14
Table 4. Am29LV160D Autoselect Codes (High Voltage Method) ..14
Sector Protection/Unprotection ...............................................14
Temporary Sector Unprotect ..................................................15
Figure 1. Temporary Sector Unprotect Operation........................... 15
Figure 2. In-System Sector Protect/Unprotect Algorithms.............. 16
Common Flash Memory Interface (CFI) . . . . . . .17
Table 5. CFI Query Identification String ..........................................17
Table 6. System Interface String .....................................................18
Table 7. Device Geometry Definition ..............................................18
Table 8. Primary Vendor-Specific Extended Query ........................19
Hardware Data Protection ......................................................19
Low V
CC
Write Inhibit ..............................................................19
Write Pulse “Glitch” Protection ...............................................19
Logical Inhibit ..........................................................................19
Power-Up Write Inhibit ............................................................19
Command Definitions . . . . . . . . . . . . . . . . . . . . . .20
Reading Array Data ................................................................20
Reset Command .....................................................................20
Autoselect Command Sequence ............................................20
Word/Byte Program Command Sequence .............................20
Unlock Bypass Command Sequence .....................................21
Figure 3. Program Operation.......................................................... 21
Chip Erase Command Sequence ...........................................21
Sector Erase Command Sequence ........................................22
Erase Suspend/Erase Resume Commands ...........................22
Figure 4. Erase Operation............................................................... 23
Command Definitions .............................................................24
Table 9. Am29LV160D Command Definitions ................................24
Write Operation Status . . . . . . . . . . . . . . . . . . . . .25
DQ7: Data# Polling .................................................................25
Figure 5. Data# Polling Algorithm................................................... 25
RY/BY#: Ready/Busy# ...........................................................26
DQ6: Toggle Bit I ....................................................................26
DQ2: Toggle Bit II ...................................................................26
Reading Toggle Bits DQ6/DQ2 ..............................................26
Figure 6. Toggle Bit Algorithm......................................................... 27
DQ3: Sector Erase Timer .......................................................28
Table 10. Write Operation Status ...................................................28
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 29
Figure 7. Maximum Negative Overshoot Waveform...................... 30
Figure 8. Maximum Positive Overshoot Waveform........................ 30
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 30
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 9. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents)............................................................. 32
Figure 10. Typical I
CC1
vs. Frequency........................................... 32
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 11. Test Setup..................................................................... 33
Table 11. Test Specifications .........................................................33
Figure 12. Input Waveforms and Measurement Levels................. 33
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Read Operations ....................................................................34
Figure 13. Read Operations Timings............................................. 34
Hardware Reset (RESET#) ....................................................35
Figure 14. RESET# Timings.......................................................... 35
Word/Byte Configuration (BYTE#) ........................................36
Figure 15. BYTE# Timings for Read Operations............................ 36
Figure 16. BYTE# Timings for Write Operations............................ 36
Erase/Program Operations .....................................................37
Figure 17. Program Operation Timings.......................................... 38
Figure 18. Chip/Sector Erase Operation Timings.......................... 39
Figure 19. Data# Polling Timings (During Embedded Algorithms). 40
Figure 20. Toggle Bit Timings (During Embedded Algorithms)...... 40
Figure 21. DQ2 vs. DQ6 for Erase and
Erase Suspend Operations............................................................ 41
Figure 22. Temporary Sector Unprotect/Timing Diagram.............. 41
Figure 23. Sector Protect/Unprotect Timing Diagram.................... 42
Figure 24. Alternate CE# Controlled Write Operation Timings...... 44
Erase and Programming Performance . . . . . . . 45
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 45
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 45
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 46
TS 048—48-Pin Standard TSOP ............................................46
TSR048—48-Pin Reverse TSOP ...........................................47
FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
8 x 9 mm ................................................................................48
SO 044—44-Pin Small Outline Package ................................49
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 50
Revision A (January 1999) .....................................................50
Revision A+1 (April 19, 1999) .................................................50
Revision B (November 23, 1999) ............................................50
Revision B+1 (February 22, 2000) ..........................................50
Revision B+2 (November 7, 2000) .........................................50
Revision B+3 (November 10, 2000) .......................................50
Revision B+4 (April 5, 2004) ...................................................50
Revision B+5 (June 4, 2004) ..................................................50
Revision B+6 (October 7, 2004) .............................................50
Revision B7 (May 5, 2006) .....................................................50
相关PDF资料
PDF描述
AM29LV160DB-70EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-70FC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-70FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-70SC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-70SD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相关代理商/技术参数
参数描述
AM29LV160DB70EI 制造商:Advanced Micro Devices 功能描述:
AM29LV160DB-70SC 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 16Mbit 2M/1M x 8bit/16bit 70ns 44-Pin SOIC
AM29LV160DB-70SI 制造商: 功能描述: 制造商:undefined 功能描述:
AM29LV160DB-90EC 制造商:Advanced Micro Devices 功能描述:
AM29LV160DB90EI 制造商:AMD 功能描述:NEW 制造商:SOCO 功能描述: 制造商:Spansion 功能描述:
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