参数资料
型号: AM29LV400T-90RWAC
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
中文描述: 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
封装: 6 X 8 MM, 0.80 MM PITCH, FBGA-48
文件页数: 1/40页
文件大小: 519K
代理商: AM29LV400T-90RWAC
PRELIMINARY
Publication# 20514
Rev: C Amendment/+2
Issue Date: July 1998
Am29LV400
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
s High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
s Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
s Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相关PDF资料
PDF描述
AM29LV400B-90RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV640DH90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Am29LV640DL90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Am29LV641DH90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Am29LV641DL90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
相关代理商/技术参数
参数描述
AM29LV640DH90REI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays
AM29LV640DL90RZI 制造商:Advanced Micro Devices 功能描述:
AM29LV640DU-90NI 制造商:Advanced Micro Devices 功能描述:
AM29LV640DU90REI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays
AM29LV640DU-90RWHIT 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063)