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参数资料
型号： AM42-0042
元件分类： 放大器
英文描述： 13750 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封装： CERAMIC, CR-15, 10 PIN
文件页数： 1/2页
文件大小： 23K
代理商： AM42-0042
M/A-COM Inc.
1
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3263-8761
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +81 3 3263-8769
Fax +44 (1344) 300-020
Advance Information
1.5 Watt Ku-Band VSAT Power Amplifier
13.75 - 14.5 GHz
AM42-0042
V1.30
Features
High Linear Gain: 32 dB Typ.
High Saturated Output Power: +32 dBm Typ.
High Power Added Efficiency: 25% Typ.
50
Input/Output Broadband Matched
Integrated Output Power Detector
Description
M/A-COM’s AM42-0042 is a four stage MMIC power amplifier in a
bolt down ceramic package, allowing easy assembly. The AM42-
0042 employs a fully matched chip with internally decoupled gate
and drain bias networks.
The AM42-0042 is designed to operate
from a constant current drain supply or a constant voltage gate
supply. By varying the bias conditions, the saturated output power
performance of this device may be tailored for various applications.
The AM42-0042 is ideally suited for use as an output stage or a
driver amplifier in VSAT systems. The AM42-0042 includes internal
supply line bypassing in the package, minimizing the number of
external components required.
M/A-COM's AM42-0042 is fabricated using a mature 0.5 micron
MBE based GaAs MESFET process. The process features full
passivation for increased performance and reliability. This product is
100% RF tested to ensure compliance to performance specifications.
CR-15
CERAMIC
BASE PLATE
4X .06 X 45°
CHAMFER
6
5
4
3
2
1
7
8
9
10
.010 SQ.
ORIENTATION TAB
2X o .096 THRU
o.004 M A B C
.090 MAX
.33
.005 ± .002
.030
.318 ± .010
.328 ± .010
.050 MIN.
10X
.530
.70
.159
.010 ± .003
10X
.040
.100
4X
.115 ± .010
.050
4X
.085
- C -
- B -
- A -
Notes: (Unless Otherwise Specified)
1. Dimensions are in inches.
2. Tolerance: in .xxx =
± .005
.xx =
± .010
Ordering Information
Part Number
Package
AM42-0042
Ceramic Bolt Down Package
Electrical Specifications: VDD = +8 V, VGG adjusted for Ids = 750 mA, 13.75 - 14.5 GHz, Zo = 50
, TA = +25 °°°°C.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
Pin = -20 dBm, Ids = 750 mA Typ.
dB
29.5
32.0
36.5
Input VSWR
Pin = +3 dBm, Ids = 750 mA Typ.
2.0:1
2.7:1
Output VSWR
Pin = -20 dBm, Ids = 750 mA Typ.
2.0:1
Output Power
Pin = +3 dBm, Ids = 750 mA Typ.
dBm
31.0
32.0
Output Power vs. Frequency
Pin = +3 dBm, Ids = 750 mA Typ.
dB
±0.3
±0.7
Output Power vs. Temperature
TA = -40
°C to +85°C, Pin = +3 dBm
dB
±0.5
Drain Bias Current
Pin = +3 dBm
mA
600
750
900
Gate Bias Voltage
Pin = +3 dBm, Ids = 750 mA Typ.
V
-2.0
-1.0
-0.4
Gate Bias Current
Pin = +3 dBm, Ids = 750 mA Typ.
mA
10
20
Thermal Resistance (
θJC)
25
oC Heat Sink
°C/W
8.0
Second Harmonic
Pin = +3 dBm, Ids = 750 mA Typ.
dBc
-35
Third Harmonic
Pin = +3 dBm, Ids = 750 mA Typ.
dBc
-45
Detector Voltage
Pin = +3 dBm, Ids = 750 mA Typ.
V
2.4
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