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参数资料
| 型号： | AM42-0042 |
| 元件分类： | 放大器 |
| 英文描述： | 13750 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | CERAMIC, CR-15, 10 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | AM42-0042 |
1.5 Watt Ku-Band VSAT Power Amplifier
AM42-0042
V1.30
2
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3263-8761
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +81 3 3263-8769
Fax +44 (1344) 300-020
Absolute Maximum Ratings
1, 2
Parameter
Absolute Maximum
Input Power
+13 dBm
VDD
+10 volts
VGG
-3 volts
VDD - VGG
12 volts
Ids
1000 mA
Channel Temperature
+150
°C
Operating Temperature
-40
°C to +85 °C
Storage Temperature
-65
°C to +150 °C
1. Exceeding any one or a combination of these limits may cause
permanent damage.
2. Adequate heat sinking and grounding required on flange base.
Pin Configuration
Pin No.
Pin Name
Description
1
VDD
Drain Supply
2
GND
DC and RF Ground
3
RF In
RF Input
4
GND
DC and RF Ground
5
VGG
Gate Supply
6
DET
Output Power Detector
7
GND
DC and RF Ground
8
RF Out
RF Output
9
GND
DC and RF Ground
10
VDD
Drain Supply
Typical Bias Configuration
3,4,5
VDD
10
1.0 F
AM42-0042
RF Out
8
RF In
3
1.0 F
VGG
5
GND
2,4,7,9
100 pF
0.01 F
3. Apply -2 volts to pin 5 (VGG), prior to applying +8 volts to pins 1 or
10 (VDD). Adjust VGG for typical drain current.
4. External DC blocking capacitors required on the RF ports.
5. For optimum IP3 performance, VDD bypass capacitors should be
placed within 0.5 inches of the VDD leads.
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