参数资料
型号: AM52-0002
元件分类: 放大器
英文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: PLASTIC, SOIC-8
文件页数: 1/8页
文件大小: 141K
代理商: AM52-0002
Specifications Subject to Change Without Notice.
M/A-COM Inc.
1
North America:
Tel. (800) 366-2266
Asia/Pacific: Tel. +81 (03) 3226-1671
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
Preliminary Release
3.5 W High Efficiency Power Amplifier
GSM 880 - 915 MHz
AM52-0002
V1.00
Features
SOIC-8 Thermally Efficient Plastic Package
+35.5 dBm Typical Power Out With 5.8 V Drain Voltage
+34.5 dBm Typical Power Out With 4.8 V Drain Voltage
+33.0 dBm Typical Power Out With 3.6 V Drain Voltage
Greater than 50% Typical Power Added Efficiency,
26 dB Typical Power Gain
Flexible External Output Matching
Occupies very small PCB footprint
Description
M/A-COM’s AM52-0002 is a GaAs MMIC power amplifier in a
thermally
efficient
low
cost
SOIC-8
plastic
package.
The
AM52-0002 is designed for high efficiency pulsed output power and
high associated gain in the GSM 880-915 MHz frequency band. The
AM52-0002 is unconditionally stable in both small and large signal
operation. It features flexible biasing for improved dynamic range
and off-chip matching for improved efficiency and flexibility. The
AM52-0002 is specifically designed for high efficiency final output
power amplification in the GSM class 4 handset but can be used in
numerous 900 MHz applications.
M/A-COM's AM52-0002 is fabricated using a mature 0.5 micron
gate length GaAs MESFET power process. The process features
full passivation for increased performance and reliability. The
AM52-0002 can be used with standard automated SMT assembly
equipment (See M/A-COM application note M558).
SOIC-8P
.004 (.10)
.050 (1.27)
M
S
M
B
A
C
.010 (.25)
.0047-
(.12-.22)
-A-
-C-
TYP
PIN 1
-B-
.010(.25)
B
EXPOSED HEATSINK
CHAMFER
(.19/.25)
(.40/1.27)
.0075/.009
.016/.050
0/8°
.050
.090
.1497/.1574
(3.80/4.00)
.2284/.2440
(5.80/6.20)
.1890/.1968
(4.80/5.00)
.013/.020 (8 PL)
(.33/.51)
.0532/.0688
(1.35/1.75)
M
Ordering Information
Part Number
Package
AM52-0002
SOIC-8 Lead Plastic
AM52-0002TR
Forward Tape and Reel *
AM52-0002SMB
Designer’s Kit
* If specific reel size is required, consult factory for part number
assignment.
Electrical Specifications:V
D1 = VD2 = VDD, TA = +25
°°C, Freq. = 880-915 MHz, V
GG = VG2 = VG1 adjusted for 1.12 A I
DDQ.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Output Power: VDD = 5.8 V
VDD = 4.8 V
VDD = 3.6 V
Pin = 10 dBm
Pulsed mode:
Duty Cycle = 12.5%
dBm
35.5
34.5
33
PAE:
VDD = 5.8 V
VDD = 4.8 V
VDD = 3.6 V
Pulse width = 570us
%
50
55
Power Gain, VDD = 5.8 V
dB
26
Second Harmonic
dBc
-35
Third Harmonic
dBc
-45
Stability1
VSWR
7:1
Load Mismatch2
VSWR
10:1
Avg. Gate Current
mA
2
Adjustable Power Control (APC)
VGG = -3.5
→ 0V
dB
30
1. Parasitic Oscillation defined as any spurious output less than 60 dBc with respect to desired signal level. Measured with nominal Pin and an output
VSWR of 7:1 any phase, Vdd = 3.6 - 5.8 V.
2. No permanent degradation with nominal Pin and an output VSWR of 10:1 at any phase (360
° rotation in 10 sec.) with V
DD up to 10V. .
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