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参数资料
| 型号： | AM81214-015 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 INCH, FM-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 47K |
| 代理商： | AM81214-015 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 15 mA
48
V
BVCER
IC = 15 mA
RBE = 10
48
V
BVEBO
IE = 1.5 mA
3.5
V
ICES
VCE = 28 V
VBE = 28 V
1.5
mA
hFE
VCE = 5.0 V
IC = 1.0 A
30
300
---
NPN SILICON RF POWER TRANSISTOR
AM81214-015
DESCRIPTION:
The
ASI AM81214-015 is an NPN silicon
bipolar transistor designed for L-Band
pulsed radar applications. It utilizes internal
matching and gold metalization for high
reliability and good VSWR capability.
FEATURES:
1.2 to 1.4 GHz operation
Internal Input/Output Matching Network
P
G = 8.5 dB at 14.5 W/1400 MHz
Omnigold Metalization System
5:1 VSWR capability rated at conditions
MAXIMUM RATINGS
IC
1.8 A
VCC
32 V
PDISS
37.5 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θ
JC
4.0 °C/W
PACKAGE STYLE .250 2L FLG
Common Base
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AM81214-030 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| AM81214-060 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| AM81214-300 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| AM81214-6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 48V V(BR)CEO | 820MA I(C) | FO-57DVAR |
| AM8127 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:AM8127 Clock Generator |
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