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参数资料
| 型号： | AMMC-5023-W10 |
| 元件分类： | 放大器 |
| 英文描述： | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.074 X 0.0236 INCH, 0.004 INCH HEIGHT, DIE |
| 文件页数： | 1/9页 |
| 文件大小： | 267K |
| 代理商： | AMMC-5023-W10 |
AMMC-5023
23 GHz Low Noise Amplifier (21.2 – 26.5 GHz)
Data Sheet
Description
Avago’s AMMC-5023 is a high gain, low noise amplifier
that operates from 21 GHz to over 30 GHz. By eliminating
the complex tuning and assembly processes typically
required by hybrid (discrete-FET) amplifiers, the AMMC-
5023 is a cost-effective alternative in both 21.2–23.6 GHz
and 24.5–26.5 GHz communications receivers. The device
has good input and output match to 50 Ohm and is un-
conditionally stable to more than 40 GHz. The backside
of the chip is both RF and DC ground. This helps simplify
the assembly process and reduces assembly related per-
formance variations and costs. It is fabricated in a PHEMT
process to provide exceptional noise and gain perfor-
mance. For improved reliability and moisture protection,
the die is passivated at the active areas.
Features
Frequency range: 21.2–26.5 GHz
High gain: 23 dB
Low noise figure: 2.3 dB
Input and output return loss: >10 dB
Single supply bias: 5 volts, 28 mA
Optional bias adjust
Applications
Digital Radio Communication Systems (21.2–23.6 GHz
and 24.5–26.5 GHz)
Any narrow band application within 21–26 GHz
24.1 GHz collision avoidance
Front-end gain stage
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
V
D1, VD2
Drain Supply Voltage
V
8
V
G1, VG2
Gate Supply Voltage
V
0.4
2
I
D1
Drain Supply Current
mA
35
I
D2
Drain Supply Current
mA
35
P
in
RF Input Power
dBm
15
T
ch
Channel Temperature
°C
+150
T
b
Operating Backside Temperature
°C
-55
+140
T
stg
Storage Temperature
°C
-65
+165
T
max
Max. Assembly Temp (60 sec max)
°C
+300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
Chip Size:
1880 x 600 m (74 x 23.6 mils)
Chip Size Tolerance: ±10 m (±0.4 mils)
Chip Thickness:
100 ± 10 m (4 ± 0.4 mils)
Pad Dimensions:
80 x 80 m (3.1 x 3.1 mils), or larger
相关PDF资料 |
PDF描述 |
|---|---|
| AMMC-5023-W50 | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-5024-W10 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5024-W50 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5024-W10 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5024 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMC-5023-W50 | 功能描述:射频放大器 Amplifier GaAs MMIC LNA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5024 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:30 KHz-40GHz Traveling Wave Amplifier |
| AMMC-5024-W10 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5024-W50 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5025-W10 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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