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参数资料
| 型号： | AMMC-5023-W10 |
| 元件分类： | 放大器 |
| 英文描述： | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.074 X 0.0236 INCH, 0.004 INCH HEIGHT, DIE |
| 文件页数： | 2/9页 |
| 文件大小： | 267K |
| 代理商： | AMMC-5023-W10 |
2
AMMC-5023 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1, VD2
Recommended Drain Supply Voltage
V
3
5
7
V
G1, VG2
Gate Supply Voltage[2]
V
0.8
(V
D1 ≤ VD1(max), VD2 ≤ VD2(max))
I
D1, ID2
Input and Output Stage Drain Supply Current
mA
14
(V
G1 = VG2 = Open, VD1 = VD2 = 5 V)
I
D1+ID2
Total Drain Supply Current
mA
13
28
35
(V
G1 = VG2 = Open, VD1 = VD2 = 5 V)
θ
ch-b
Thermal Resistance[3] (Backside temperature, T
b = 25°C)
°C/W
44
Notes:
1. Backside ambient operating temperature T
A = 25°C unless otherwise noted.
2. Open circuit voltage at V
G1 and VG2 when VD1 and VD2 are 5 Volts.
3. Channel-to-backside Thermal Resistance (θ
ch-b) = 66°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T
b) = 25°C calculated from measured data.
RF Specifications[4]
(V
G1 = VG2 = Open, VD1 = VD2 = 5V, ID1 + ID2 = 28 mA, Zin = Z0 = 50Ω)
21.2–23.6 GHz
24.5–26.5 GHz
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
|S
21|
2
Small-signal Gain
dB
21
23.6
28
17
19
25
|S
21|
2
Small-signal Gain Flatness
dB
±1.5
±1.2
RL
in
Input Return Loss
dB
10
12
10
11.5
RL
out
Output Return Loss
dB
9
12
10
17
|S
12|
2
Isolation
dB
40
50
40
43
P
-1dB
Output Power @ 1 dB Gain Compression
dBm
9.5
10
f = 23 GHz
P
sat
Saturated Output Power
dBm
10.5
11.5
(@ 3 dB Gain Compression)
OIP3
Output 3rd Order Intercept Point, 22.4 GHz
dB
18
Rf
in1 = Rfin2 = -20 dBm, f = 2 MHz 25.5 GHz
24
NF
Noise Figure
22 GHz
dB
2.3
2.8
25 GHz
2.3
2.8
Note:
4. 100% on-wafer RF test is done at frequency = 21.2, 22.4, 23.6, 24.5, 25.5 and 26.5 GHz, except as noted.
相关PDF资料 |
PDF描述 |
|---|---|
| AMMC-5023-W50 | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMC-5024-W10 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5024-W50 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5024-W10 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMC-5024 | 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMC-5023-W50 | 功能描述:射频放大器 Amplifier GaAs MMIC LNA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5024 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:30 KHz-40GHz Traveling Wave Amplifier |
| AMMC-5024-W10 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5024-W50 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5025-W10 | 功能描述:射频放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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