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参数资料
| 型号： | AMMC-5033-W10 |
| 元件分类： | 放大器 |
| 英文描述： | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.108 X 0.0516 INCH, 0.004 INCH HEIGHT, DIE |
| 文件页数： | 2/9页 |
| 文件大小： | 364K |
| 代理商： | AMMC-5033-W10 |
2
AMMC-5033 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
d1
First Stage Drain Supply Current
mA
280
320
(V
d1 = 3.5 V, Vg1 = Open, Vgg set for Id2 Typical)
I
d2
Second Stage Drain Supply Current
V
500
(V
d2 = 5 V, Vg1 = Open, Vgg set for Id2 Typical)
Vgg
Gate Supply Operating Voltage
V
-0.95
-0.6
-0.4
(I
d1(Q) + Id2(Q) = 780 (mA))
DETBias
Detector Bias Voltage (Optional)
V
Vd2
θ
c1(ch-bs)
First Stage Thermal Resistance[2]
°C/W
31
(Backside Temperature, Tb = 25°C)
θ
c2(ch-bs)
Second Stage Thermal Resistance[2, 3]
°C/W
19
(Backside Temperature, Tb = 25°C)
Notes:
1. Backside temperature T
b = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 42°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-
tance at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-5033 RF Specifications[4,5]
Tb = 25°C, V
d1 = 3.5 V, Vd2 = 5 V, Id1(Q) = 280 mA, Id2(Q) = 500 mA, Zo = 50 Ω
Lower Band
Mid Band
Upper Band
Specifications
Parameters and
(17.7 - 21 GHz)
(21 - 26.5 GHz)
(26.5 - 32 GHz)
Symbol
Test Condition
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Gain
Small-Signal Gain[5]
dB
20
22
17.5
20
16.5
18.5
P
-1dB
Output Power at 1dB Gain
dB
23.5
25
25.5
27
25
26.5
Compression[6]
P
-3dB
Output Power at 3dB Gain
dB
27
28
27
Compression[6]
OIP
3
Output Third Order Intercept
dBm
27
29
32
29
32
Point;[6]; f = 2 MHz;
Pin = +2 dBm
RL
in
Input Return Loss[5]
dB
11.5
13.5
11
13
11
13
RL
out
Output Return Loss[5]
dB
14
20
14
19
15
22
Isolation
Min. Reverse Isolation
dB
47
48
46
Notes:
4. Data measured in wafer form T
b = 25°C.
5. 100% on-wafer RF test is done at frequency = 17.7, 21, 26.5 and 32 GHz.
6. 100% on-wafer test frequency = 17.7, 26.5 and 32 GHz.
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