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参数资料
| 型号： | AMMC-5033-W10 |
| 元件分类： | 放大器 |
| 英文描述： | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.108 X 0.0516 INCH, 0.004 INCH HEIGHT, DIE |
| 文件页数： | 7/9页 |
| 文件大小： | 364K |
| 代理商： | AMMC-5033-W10 |
7
Biasing and Operation
The recommended quiescent DC bias condition for
optimum efficiency, performance, and reliability is
V
d1 = 3.5 volts and Vd2 = 5 volts with Vgg set for
I
d1 + Id2 = 780 mA (no connection to Vg1). This bias ar-
rangement results in default quiescent drain currents
I
d1 = 280 mA, Id2 = 500 mA. A single DC gate supply
connected to V
gg will bias all gain stages.
If operation with both V
d1 and Vd2 at 5 volts is desired,
an additional wire bond connection from the V
g1 pad
to V
gg external bypass chip capacitor (shorting Vg1 to
V
gg) will balance the current in each gain stage. Vgg (=
V
g1) can be adjusted for Id1 + Id2 = 780 mA. Muting can
be accomplished by setting V
g1 and/or Vgg to the pinch-
off voltage V
p.
An optional output power detector network is also
provided. Detector sensitivity can be adjusted by bias-
ing the diodes with typically 1 to 5 volts applied to the
Det- bias terminal. Simply connecting Det-Bias to the V
d2
supply is a convenient method of biasing this detector
network. The differential voltage between the Det-Ref
and Det-Out pads can be correlated with the RF power
emerging from the RF output port. The detected volt-
age is given by:
V = (V
ref - Vdet) - Vofs
Where V
ref is the voltage at the DET_REF port, Vdet is
a voltage at the DET_OUT port, and V
ofs is the zero-in-
put-power offset voltage. There are three methods to
calculate V
ofs:
1. V
ofs can be measured before each detector measure-
ment (by removing or switching off the power source
and measuring V
ref - Vdet ). This method gives an error
due to temperature drift of less than 0.0002 dB/°C.
2. V
ofs can be measured at a single reference temperature.
The drift error will be less than 0.25 dB.
3. V
ofs can either be characterized over temperature and
stored in a lookup table, or it can be measured at
two temperatures and a linear fit used to calculate
V
ofs at any temperature. This method gives an error
close to method #1.
With reference to Figure 13, the RF input is DC coupled
to a shunt 50 Ω resistor but it is DC blocked to the input
of the first stage. The RF output is DC blocked to the
output of the second stage, however, it is DC coupled
to the detector bias circuit. If the output detector is
biased using the on-chip optional Det-Bias network,
an external DC blocking capacitor may be required at
the RF Output port.
No ground wires are needed since ground connections
are made with plated through-holes to the backside of
the device.
Assembly Techniques
The backside of the AMMC- 5033 chip is RF ground. For
microstripline applications, the chip should be attached
directly to the ground plane (e.g., circuit carrier or heat-
sink) using electrically conductive epoxy.[1,2]
For best performance, the topside of the MMIC should
be brought up to the same height as the circuit sur-
rounding it. This can be accomplished by mounting a
gold plated metal shim (same length and width as the
MMIC) under the chip, which is of the correct thickness
to make the chip and adjacent circuit coplanar.
The amount of epoxy used for chip and or shim at-
tachment should be just enough to provide a thin fillet
around the bottom perimeter of the chip or shim. The
ground plane should be free of any residue that may
jeopardize electrical or mechanical attachment.
The location of the RF bond pads is shown in Figure
14. Note that all the RF input and output ports are in
a Ground-Signal-Ground configuration.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is sufficient for
signal connections, however double-bonding with 0.7
mil gold wire or the use of gold mesh is recommended
for best performance, especially near the high end of
the frequency range.
Thermosonic wedge bonding is the preferred method
for wire attachment to the bond pads. Gold mesh can
be attached using a 2 mil round tracking tool and a
tool force of approximately 22 grams with an ultrasonic
power of roughly 55 dB for a duration of 76 ± 8 mS. A
guided wedge at an ultrasonic power level of 64 dB can
be used for the 0.7 mil wire. The recommended wire
bond stage temperature is 150 ± 2°C.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100 m thick and should be handled
with care. This MMIC has exposed air bridges on the
top surface and should be handled by the edges or
with a custom collet (do not pick up die with vacuum
on die center.)
This MMIC is also static sensitive and ESD handling
precautions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
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相关代理商/技术参数 |
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| AMMC-5033-W50 | 功能描述:射频放大器 Amp GaAs MMIC RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5040 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:20-45 GHz GaAs Amplifier |
| AMMC-5040-W10 | 功能描述:射频放大器 20 - 45 GHz 25 dB RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5040-W50 | 功能描述:射频放大器 20 - 45 GHz 25 dB RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-5618 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:6 - 20 GHz Amplifier |
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