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参数资料
| 型号： | AMMC-6442-W50 |
| 元件分类： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | DIE |
| 文件页数： | 6/8页 |
| 文件大小： | 274K |
| 代理商： | AMMC-6442-W50 |
6
Application and Usage
Recommended quiescent DC bias condition for optimum
power and linearity performances is Vd=5 volts with Vg
(-1V) set for Id=700 mA. Minor improvements in per-
formance are possible depending on applications. The
quiescent drain current range is 500 to 900mA. Muting
can be accomplished by setting Vg1, Vg2, and Vg3 to the
pinch-o voltage Vp (-2V).
Notes:
1. Vd3 can be biased from either side.
2. 1uF capacitors, not shown on gate and drain
lines are required.
y and bias conguration
>68pf
Vd1, Vd2, Vd3
Vd3
Vg
0.1uF
RFin
RFout
>68pf
0.1uF
A typical DC bias conguration is shown in Figure 13. Vd3
can be biased from either side. The RF input and output
are DC decoupled internally. No ground wires are needed
since ground connections are made with plated through-
holes to the backside of the device. Figure 14 illustrates a
simplied schematic of the AMMC-6442 MMIC.
Figure 14. Schematic and recommended assemble example
RFin
RFout
Vg3
Vg2
Vg1
Vd3
Vd1
Vd2
Vd3
Figure 13. Typical Assembly and bias conguration
Note: No RF performance degradation is seen due to ESD up to 250V
HBM and 50V MM. The DC characteristics in general show increased
leakage at lower ESD discharge voltages. The user is reminded that this
device is ESD sensitive and needs to be handled with all necessary ESD
protocols.
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