参数资料
型号: AMMP-6441-BLKG
元件分类: 放大器
英文描述: 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 5 X 5 MM, ROHS COMPLIANT, SMT, 8 PIN
文件页数: 5/12页
文件大小: 366K
代理商: AMMP-6441-BLKG
2
Absolute Maximum Ratings[1,2,3,4, and 5]
Symbol
Parameters
Unit
Max
Vd
Positive Supply Voltage[2]
V
5.5
Vg
Gate Supply Voltage
V
-2 to 0
PD
Power Dissipation[2,3]
W3
Pin
CW Input Power[2]
dBm
20
Tch
Operating Channel Temp. [4,5]
°C
+150
Tstg
Storage Case Temp.
°C
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
°C
+260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is
signicantly reduced.
4. These ratings apply to each individual FET.
5. The operating channel temperature will directly aect the device MTTF. For maximum life, it is recommended
that channel temperatures be maintained at the lowest possible levels.
DC Specications/ Physical Properties [6]
Symbol
Parameters and Test Conditions
Unit
Min
Typ
Max
Id(q)
Drain Supply Current (Vd=5 V, Vg set for Id(q)Typical)
mA
450
Vg
Gate Supply Operating Voltage (Id(q) = 450 (mA))
V
-1.3
-1
-0.7
Tch-bs
Thermal Resistance (Channel-to-Base Plate)
°C/W
34
Tch
Channel Temperature
°C
150
Note:
6. Assume SnPb soldering to an evaluation RF board at 73.5°C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 2.75W with 0.4W RF power delivered to load. Power dissipation is 2.35W and the temperature rise in the channel is 79°C. In
this condition, the base plate temperature must be remained below 70.1°C to retained maximum operating channel temperature below 150°C.
RF Specications [1,2,3, and 4]
TA= 25°C, Vdd = 5.0 V, Idq =0.45 A, Vg = -1V, Zo=50
:
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Freq
Operational Frequency
GHz
36
40
Gain
Small-signal Gain [3, 4]
dB
18
20
P-1dB
Output Power at 1dB [4] Gain Compression
dBm
24.5
26
IM3
Relative third Order Inter-modulation Level
'f=10MHz, Po=+12dBm, SCL
dBc
-38
RLin
Input Return Loss
dB
10
RLout
Output Return Loss
dB
10
Isolation
Reverse Isolation
dB
45
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4mm connecter based evaluation board at TA = 25°C.
2. This nal package part performance is veried by a functional test correlated to actual performance at one or more frequencies.
3. Pre-assembly into package performance veried 100% on-wafer published specications at Frequencies = 37, 38 and 40GHz
4. The Gain and P1dB tested at 37, 38 and 40GHz guaranteed with measurement accuracy ± 0.6 dB for Gain@37GHz and 38GHz, ±1.0dB for Gain@40GHz.
Measurement accuracy ± 0.6 dB for P1dB@37GHz, ± 0.8 dB for P1dB@38GHz and ± 1.2 dB for P1dB@40GHz.
相关PDF资料
PDF描述
AMMP-6441-TR1G 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMP-6441-TR2G 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMP-6522-TR2 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMP-6522-BLK 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMT-20033-401 12000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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