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参数资料
| 型号： | AMMP-6442-TR2 |
| 元件分类： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, CERAMIC, SMT-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 359K |
| 代理商： | AMMP-6442-TR2 |
2
Absolute Maximum Ratings[1,2,3, and 4]
Symbol
Parameters
Unit
Max
Vd
Positive Supply Voltage[2]
V
5.5
Vg
Gate Supply Voltage
V
-2 to 0
PD
Power Dissipation[2,3]
W6
Pin
CW Input Power[2]
dBm
20
Tch
Operating Channel Temp.[4,5]
°C
+150
Tstg
Storage Case Temp.
°C
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
°C
+260
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. These ratings apply to each individual FET
4. The operating channel temperature will directly aect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specications/ Physical Properties [1]
Symbol
Parameters and Test Conditions
Unit
Min
Typ
Max
Id(q)
Quiescent Drain Supply Current
(Vd = 5 V, Vg set for Id(q)Typical)
mA
700
Vg
Gate Supply Operating Voltage
(Id(q) = 700 (mA))
V
-1.3
-1
-0.7
Tch-bs
Thermal Resistance
(Channel-to-Base Plate)
°C/W
17
Tch
Channel Temperature
°C
150
Note:
1. Assume AnPb soldering to an evaluation RF module at 90.5°C base plate temperatures.
RF Specications [1,2,3, and 4]
TA = 25°C, Vdd = 5.0 V, Idq = 0.7 A, Vg = -1V, Zo = 50
:
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Freq
Operational Frequency
GHz
37
40
Gain
Small-signal Gain [3, 4]
dB
20
23
P-1dB
Output Power at 1dB(4) Gain Compression
dBm
28
30
IM3
Relative third Order Inter-modulation Level
'f = 20MHz, Po = +18dBm, SCL
dBc
36
RLin
Input Return Loss
dB
8
RLout
Output Return Loss
dB
8
Isolation
Reverse Isolation
dB
45
Note:
1. Small/Large -signal data measured in packaged form on a 2.4mm connecter based evaluation board at TA = 25°C.
2. This nal package part performance is veried by a functional test correlated to actual performance at one or more frequencies.
3. Pre-assembly into package performance veried 100% on-wafer published specications at Frequencies=37 and 40GHz
4. The Gain and P1dB tested at 37 and 40GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB.
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