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参数资料
| 型号： | AMMP-6522-TR2 |
| 元件分类： | 放大器 |
| 英文描述： | 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 7 X 5 MM, SURFACE MOUNT PACKAGE-8 |
| 文件页数： | 12/14页 |
| 文件大小： | 618K |
| 代理商： | AMMP-6522-TR2 |
7
AMMP-6522 Application and Usage
Biasing and Operation
The AMMP-6522 is normally biased with a positive
drainsupplyconnectedtotheVDDpinandanegative
gate voltage connected to the Vg pin through bypass
capacitors as shown in Figure 17. The recommended
drainsupplyvoltageis4Vandgatebiasvoltageis-1V.
The corresponding currents are 75 mA and 0.1 mA re-
spectively.ThetypicalrequiredLOlevelis+15dBmand
it should come from a low noise driver to ensure that
overallFrontEndNFislow.
The image rejection performance is dependent on the
selectionoftheIFquadraturehybrid.Theperformance
oftheIFhybridaswellasthephasebalanceandVSWR
oftheinterfacetotheAMMP-6522willaffecttheoverall
frontendperformance.
There is minimal performance degradation if Vdd is
loweredto3Vorraisedto5V.Iflowercurrentisrequired,
then Vdd = 3 V will provide considerably similar RF
performance.
Figure 17. Application of receiver with IF Balun
RF
IF1
LSB
NC
IF2
Vdd
USB
LO
IF
RF
1000 pF
NC
Vg
LO
+15 dBm
IF
1-3.5 GHz
USB
TOP VIEW
PACKAGE BASE: GND
IF
Vg
1000 pF
LSB
The recommendedVg is -1V. However, depending on
theoperatingfrequency,Vgcanbechangedtoachieve
better performance for that particular frequency.
PleaserefertoFigures9and10forhowtobestselectthe
appropriateVgfortheintendedfrequencyofoperation.
TheoreticallyIFfrequenciescanbeaslowasDC.How-
ever,whendirectconversionisused(IF=DC),aso-called
phenomenon DC-offset could occur at the two IF out-
puts. In most practical applications, IF should be more
thanafewhundredskHztoavoidDC-offsetcorrection.
RefertheAbsoluteMaximumRatingstableforallowed
DCandthermalcondition.
相关PDF资料 |
PDF描述 |
|---|---|
| AMMP-6522-BLK | 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMT-20033-401 | 12000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMT-8033-501 | 4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AWT-10533-301 | 4500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AWT-10533-501 | 4500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMP-6522-TR2G | 功能描述:射频放大器 LNA IR Mixer 6-22GHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMP-6530 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:5-30 GHz Image Reject Mixer |
| AMMP-6530-BLK | 功能描述:射频混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| AMMP-6530-TR1 | 功能描述:射频混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| AMMP-6530-TR2 | 功能描述:射频混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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