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| 型号： | AN-9008 |
| 厂商： | Fairchild Semiconductor Corporation |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:37; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 在一个反激变换器使用QFETs |
| 文件页数： | 1/9页 |
| 文件大小： | 124K |
| 代理商： | AN-9008 |
Rev D, July 2000
July, 2000
1
AN9008
The Use of QFETs in a Flyback Converter
By Il Soo Yang
Introduction
Power supply designers face many challenges in designing more efficient and cost-effective power
supplies. Efficiency is a major consideration in designing switching power supplies. Many factors in
the design process such as the input filter capacitance, transformer core geometry and construc-
tion, output rectifier, and switching device etc., affect the efficiency of switching power supplies.
Among the losses all components generate, switching device losses occupy about 30%. Hence,
selecting MOSFETs with optimum efficiency and high reliability is very crucial in power supply
design. This application note compares the key characteristics, power losses, and efficiency of the
new QFET and a conventional MOSFET in a 60 watt flyback converter operated at 180 to 265
VAC.
QFET Characteristics
Almost all the power supplies used in TVs, VCRs, PCs, fax machines, and other home appliances
rely on a switching circuit to convert the AC wall power to DC power or DC to AC. Thus, they are
referred to as switched mode power supplies. To obtain high efficiency, it is crucial for designers to
select switching MOSFETs to give very low losses in the circuits. MOSFETs must exhibit low con-
duction and switching losses with safety qualifications. Fairchild Semiconductor, in extending its
commitment to develop high quality MOSFETs, now offers new high efficiency QFETs for switched
mode power supply applications.
A power QFET, rated at 600V and used in a 60 watt flyback converter, features a gate charge rat-
ing which is 45 percent lower than existing devices for improved switching and drive efficiency. Fig-
ure 1 compares the new QFET FQP7N60 with its conventional MOSFET counterpart. By using
unified singular well stripe technology, the Miller capacitance of the new QFET is reduced by about
40 percent.
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