- 您现在的位置：买卖IC网 > PDF目录375330 > AO3422 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | AO3422 |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 139K |
| 代理商： | AO3422 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
75
115
48
Max
100
150
60
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
T
A
=70°C
0.8
W
Power Dissipation
T
A
=25°C
P
D
1.25
A
T
A
=70°C
1.7
10
Pulsed Drain Current
B
Continuous Drain
Current
A
T
A
=25°C
I
D
2.1
Drain-Source Voltage
Gate-Source Voltage
55
±12
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
AO3422
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 55V
I
D
= 2.1A (V
GS
= 4.5V)
R
DS(ON)
< 1
60
m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 200m
Ω
(V
GS
= 2.5V)
General Description
The AO3422 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product
AO3422 is Pb-free (meets
ROHS & Sony 259 specifications). AO3422L is a
Green Product ordering option. AO3422 and
AO3422L are electrically identical.
G
D
S
S
G
D
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO3422L | N-Channel Enhancement Mode Field Effect Transistor |
| AO3423 | P-Channel Enhancement Mode Field Effect Transistor |
| AO3424 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD454 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD454L | N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3422_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO3422L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO3423 | 功能描述:MOSFET P-CH -20V -2A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3423_102 | 功能描述:MOSFET P-CH 20V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:最後搶購 安装类型:表面贴装 供应商器件封装:SOT-23 封装/外壳:TO-236-3，SC-59，SOT-23-3 标准包装:3,000 |
| AO3423_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。