参数资料
型号: AO3434
厂商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N沟道增强型场效应管
文件页数: 1/4页
文件大小: 179K
代理商: AO3434
10 sec
Steady-State
30
±
20
V
DS
V
GS
4.2
3.3
3.5
2.8
I
DM
1.4
0.9
1.0
0.64
T
J
, T
STG
Symbol
Typ
70
100
63
Max
90
125
80
t
10s
Steady-State
Steady-State
R
θ
JL
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
A
P
D
W
°C
I
D
Continuous Drain
Current
A,F
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
Parameter
Symbol
Gate-Source Voltage
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
Units
Maximum
30
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics
Units
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
R
θ
JA
Parameter
-55 to 150
AO3434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 4.2A (V
GS
= 10V)
R
DS(ON)
< 52m
(V
GS
= 10V)
R
DS(ON)
< 75m
(V
GS
= 4.5V)
ESD Protected
General Description
The AO3434 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
Standard Product AO3434 is Pb-free (meets
ROHS & Sony 259 specifications).
S
G
D
TO-236
(SOT-23)
Top View
D
S
G
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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参数描述
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