- 您现在的位置：买卖IC网 > PDF目录375330 > AO3700 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode PDF资料下载
参数资料
| 型号： | AO3700 |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N沟道增强模式场效应晶体管肖特基二极管 |
| 文件页数： | 1/5页 |
| 文件大小： | 125K |
| 代理商： | AO3700 |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
175
80
Maximum Junction-to-Lead
C
Steady-State
58.5
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
109.4
136.5
135
°C/W
110
150
80
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
117
43
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
80.3
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
0.7
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.15
0.92
A
1
Pulsed Forward Current
B
10
Schottky reverse voltage
20
2
Continuous Forward Current
A
I
F
A
2.6
10
Pulsed Drain Current
B
Gate-Source Voltage
±12
3.3
Continuous Drain Current
A
I
D
Parameter
Drain-Source Voltage
MOSFET
30
Schottky
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO3700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 3.3A (V
GS
= 10V)
R
DS(ON)
< 65m
(V
GS
= 10V)
R
DS(ON)
< 75m
(V
GS
= 4.5V)
R
DS(ON)
< 160m
(V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO3700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3700 is Pb-free (meets ROHS & Sony
259 specifications). AO3700L is a Green Product ordering
option. AO3700 and AO3700L are electrically identical.
A
K
G
D
S
SOT-23-5
Top View
1
2
3
5
4
G
S
A
D
K
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO3701 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO3703 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO3703L | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4400 | LJT 55C 55#22D PIN RECP |
| AO4401 | LJT 55C 55#22D SKT RECP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3701 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO3702 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO3702L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO3703 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO3703L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
发布紧急采购，3分钟左右您将得到回复。