参数资料
型号: AO4407A
厂商: ALPHA AND OMEGA SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: GREEN, SOIC-8
文件页数: 1/5页
文件大小: 186K
代理商: AO4407A
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Parameter
Symbol
Typ
Max
t
≤ 10s
32
40
Steady State
60
75
Steady State
RθJL
17
24
Junction and Storage Temperature Range
TA=70°C
ID
Gate-Source Voltage
PD
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
G
Power Dissipation
A
TA=25°C
Drain-Source Voltage
Pulsed Drain Current
B
-30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Continuous Drain
Current
A
Units
Parameter
TA=25°C
TA=70°C
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
Maximum Junction-to-Ambient
A
°C/W
RθJA
A
mJ
V
2.0
°C
-55 to 150
W
Maximum
-12
-10
3.1
±25
-60
-26
101
AO4407A
30V P-Channel MOSFET
Product Summary
VDS = -30V
ID = -12A
(VGS = -20V)
RDS(ON) < 11m (VGS = -20V)
RDS(ON) < 13m (VGS = -10V)
RDS(ON) < 17m (VGS = -6V)
100% UIS Tested
100% Rg Tested
General Description
The AO4407A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
SOIC-8
Top View
Bottom View
D
S
G
D
S
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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