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参数资料
| 型号： | AO4407L |
| 厂商： | ALPHA |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 3/4页 |
| 文件大小： | 140K |
| 代理商： | AO4407L |
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-
D
V
GS
=-4V
-4.5V
-5V
-5.5V
-10V
0
5
10
15
20
25
0
0.5
1
1.5
2
-V
GS
(Volts)
2.5
3
3.5
4
4.5
5
Figure 2: Transfer Characteristics
-
D
(
0
5
10
15
20
25
30
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
S
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=-10V
V
GS
=-4.5V
0
10
20
30
40
50
60
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=-5V
V
GS
=-6V
V
GS
=-10V
I
D
=-10A
25°C
125°C
I
D
=-10A
-6V
-8V
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4409 | Circular Connector; No. of Contacts:26; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AO4410 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4410L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4411 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4411L | P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4408 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4408L | 制造商:ALPHA 制造商全称:ALPHA 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4409 | 功能描述:MOSFET P-CH -30V -15A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4409_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4410 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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