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参数资料
| 型号： | AO4407L |
| 厂商： | ALPHA |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -沟道增强型场效应晶体管 |
| 文件页数： | 4/4页 |
| 文件大小： | 140K |
| 代理商： | AO4407L |
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
G
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
10
20
30
40
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
1ms
10ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=-15V
I
D
=-12A
Single Pulse
D=T
on
/
T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=40°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4409 | Circular Connector; No. of Contacts:26; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AO4410 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4410L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4411 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4411L | P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4408 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4408L | 制造商:ALPHA 制造商全称:ALPHA 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4409 | 功能描述:MOSFET P-CH -30V -15A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4409_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4410 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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