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参数资料
| 型号： | AO4444L |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 115K |
| 代理商： | AO4444L |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
31
59
16
Max
40
75
24
R
θ
JL
W
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
I
D
Continuous Drain
Current
A
Pulsed Drain Current
B
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
20
17
80
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
R
θ
JA
AO4444
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 20A (V
GS
= 10V)
R
DS(ON)
< 5.5m
(V
GS
= 10V)
R
DS(ON)
< 7.5m
(V
GS
= 4.5V)
General Description
The AO4444 uses advanced trench technology to
provide excellent R
DS(ON)
, body diode characteristics
and ultra-low gate resistance. This device is ideally
suited for use as a low side switch in 12V buck
converters.
Standard Product AO4444 is Pb-free
(meets ROHS & Sony 259 specifications). AO4444L
is a Green Product ordering option. AO4444 and
AO4444L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4446 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4446L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4447 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4447L | P-Channel Enhancement Mode Field Effect Transistor |
| AO4449 | P-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4446 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4446_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4446L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4447 | 功能描述:MOSFET P-CH -30V -15A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4447_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
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