参数资料
型号: AO4468
厂商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N沟道增强型场效应管
文件页数: 4/4页
文件大小: 144K
代理商: AO4468
AO4468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
DS
=V
GS
I
D
=1mA
1.4
50
C
oss
1.8
800
140
80
0.5
220
140
15
7
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONE0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TT
FUNCTIONS AND RELIABILITY WITHOUT Single Pulse
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
V
DS
=15V
I
D
=11.6A
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=40°C/W
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
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