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参数资料
| 型号： | AO4610L |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 1/9页 |
| 文件大小： | 215K |
| 代理商： | AO4610L |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
DM
T
J
, T
STG
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
Current
A
Pulsed Forward Current
B
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
-55 to 150
-55 to 150
T
A
=25°C
T
A
=70°C
I
D
A
T
A
=70°C
Power Dissipation
T
A
=25°C
P
D
A
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
I
D
-30
2
1.28
W
8.5
6.6
30
2
1.28
-5.6
-7.1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Max n-channel
30
±20
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
D
W
°C
AO4610
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 8.5A(V
GS
=10V) -7.1A(V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 18m
(V
GS
=10V) < 25m
(V
GS
= -10V)
< 28m
(V
GS
=4.5V) < 40m
(V
GS
= -4.5V)
V
F
<0.5V@1A
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.
Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
G1
S1
G2
S2/A
D1
D1
D2/K
D2/K
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
n-channel
p-channel
G2
D2
S2
K
A
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4611 | Complementary Enhancement Mode Field Effect Transistor |
| AO4611L | Complementary Enhancement Mode Field Effect Transistor |
| AO4612 | Complementary Enhancement Mode Field Effect Transistor |
| AO4612L | Complementary Enhancement Mode Field Effect Transistor |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4611 | 功能描述:MOSFET N+P 60V 6.3A/4.9A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4611_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:60V Dual P N-Channel MOSFET |
| AO4611L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4612 | 功能描述:MOSFET N/P-CH COMPL 60V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4612_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:60V Complementary Enhancement Mode Field Effect Transistor |
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