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参数资料
| 型号： | AO4705L |
| 厂商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增强模式场的肖特基二极管晶体管 |
| 文件页数： | 2/5页 |
| 文件大小： | 129K |
| 代理商： | AO4705L |
AO4705
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1.7
60
-2.5
13
16
10.7
25
26
-0.72
16
21
14
T
J
=125°C
m
m
g
FS
V
SD
I
S
S
V
A
-1
-4.2
C
iss
C
oss
C
rss
R
g
2076
503
302
2
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
37.2
7
10.4
12.4
8.2
25.6
12
33
23
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.48
0.07
0.52
0.15
V
4.2
15
120
20
60
C
T
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
mA
V
R
=24V, T
J
=125°C
V
R
=24V, T
J
=150°C
V
R
=15V
Junction Capacitance
I
F
=3.0A
V
R
=24V
I
rm
Maximum reverse leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F
=-10A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-4.5V, I
D
=-10A
V
DS
=-5V, I
D
=-10A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-10A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-20V, I
D
=-10A
I
S
=-1A,V
GS
=0V
I
F
=-10A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, I
D
=-10A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=1.0
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The SOA curve provides a single pulse rating.
Rev 4: June 2005
Alpha & Omega Semiconductor, Ltd.
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